Title :
Germanium on double-SOI photodetectors for 1550 nm operation
Author :
Dosunmu, Olufemi ; Emsley, Matthew K. ; Cannon, Douglas D. ; Ghyselen, Bruno ; Kimerling, Lionel C. ; Ünlü, M. Selim
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
Abstract :
In this paper, we have fabricated a resonant cavity enhanced (RCE) Ge-on-double-silicon on insulator (SOI) photodetector for operation around the 1550 nm communication wavelength. The enhanced response of this detector is attributed to both the resonant cavity effect as well as the strain induced band gap narrowing of the Ge layer.
Keywords :
cavity resonators; elemental semiconductors; energy gap; germanium; optical communication equipment; optical fabrication; photodetectors; silicon compounds; silicon-on-insulator; 1550 nm; SOI; Si; SiO2-Si-Ge; communication wavelength; double-silicon-on-insulator photodetector fabrication; germanium layer; resonant cavity; strain induced band gap narrowing; Absorption; Detectors; Distributed Bragg reflectors; Germanium; Lattices; Materials science and technology; Mirrors; Photodetectors; Photonic band gap; Resonance;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253069
