Photodetection in the visible and near-infrared with a silicon pyramidal microdischarge device

Author

Ostrom, Nels P. ; Park, Sung-Jin ; Ewing, J.J. ; Eden, J. Gary

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

857

Abstract

In this paper, the characterization of microdischarge based photodetectors, fabricated in p-type silicon cut on the (100) plane was reported. The results show the photosensitivities of four different devices to changes in incident optical power from a He-Ne laser operating at 633 nm. The interesting comparison shows that the response of the microdischarge based photodetector is an order of magnitude larger than that for the avalanche photodiode (APD).

Keywords

elemental semiconductors; gas lasers; helium; infrared spectra; micro-optics; neon; optical fabrication; photodetectors; silicon; visible spectra; 633 nm; APD; He-Ne; He-Ne laser; Si; avalanche photodiode; near-infrared spectra; optical power; p-type silicon; photodetector fabrication; photosensitivity; silicon pyramidal microdischarge device; visible spectra; Dielectric thin films; Light sources; Optical devices; Optical films; Optical filters; Optical sensors; Photodetectors; Power lasers; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253071

Filename

1253071