Title :
Photodetection in the visible and near-infrared with a silicon pyramidal microdischarge device
Author :
Ostrom, Nels P. ; Park, Sung-Jin ; Ewing, J.J. ; Eden, J. Gary
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
In this paper, the characterization of microdischarge based photodetectors, fabricated in p-type silicon cut on the (100) plane was reported. The results show the photosensitivities of four different devices to changes in incident optical power from a He-Ne laser operating at 633 nm. The interesting comparison shows that the response of the microdischarge based photodetector is an order of magnitude larger than that for the avalanche photodiode (APD).
Keywords :
elemental semiconductors; gas lasers; helium; infrared spectra; micro-optics; neon; optical fabrication; photodetectors; silicon; visible spectra; 633 nm; APD; He-Ne; He-Ne laser; Si; avalanche photodiode; near-infrared spectra; optical power; p-type silicon; photodetector fabrication; photosensitivity; silicon pyramidal microdischarge device; visible spectra; Dielectric thin films; Light sources; Optical devices; Optical films; Optical filters; Optical sensors; Photodetectors; Power lasers; Silicon; Testing;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253071
