DocumentCode
400397
Title
Theoretical modeling and experimental characterization of InAs/lnGaAs dots in a well detector
Author
Amtout, A. ; Raghavan, S. ; Rotella, P. ; von Winckel, G. ; Stintz, A. ; Krishna, S.
Author_Institution
ECE Dept., New Mexico Univ., Albuquerque, NM, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
923
Abstract
In this paper a InGaAs/GaAs quantum dot in a well intersubband detectors were grown by molecular beam epitaxy (MBE). The spectral response of the detector is compared with the prediction of our theoretical model.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; infrared spectra; molecular beam epitaxial growth; photodetectors; semiconductor device models; semiconductor quantum dots; semiconductor quantum wells; InAs-lnGaAs dots in a well detector experimental characterization; InGaAs-GaAs; MBE; intersubband detectors theoretical modeling; molecular beam epitaxy; spectral response; Dark current; Detectors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Quantum mechanics; Semiconductor process modeling; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253105
Filename
1253105
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