Title :
Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers
Author :
Stiff-Roberts, A.D. ; Chakrabarti, S. ; Bhattacharya, P. ; Kennerly, S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
In this paper, we present a QDIP heterostructure, comprised of InAs QDs embedded in a periodic AlAs/GaAs superlattice (SL) barrier. This SL barrier allows us to control the performance of QDIPs, culminating in state-of-the-art responsivity and conversion efficiency for a QDIP with a total SL period of 15 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; infrared spectra; optical multilayers; photodetectors; semiconductor quantum dots; semiconductor superlattices; 15 nm; AlAs-GaAs; conversion efficiency; periodic AlAs-GaAs superlattice barriers; quantum dot infrared photodetector heterostructure; quantum dot infrared photodetector performance control; state-of-the-art responsivity; Dark current; Electrons; Gallium arsenide; Infrared detectors; Infrared spectra; Laboratories; Photodetectors; Quantum dots; Superlattices; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253106
