Title :
Mg-doped AlGaInP laser diodes with high characteristic temperature
Author :
Onishi, Toshikazn ; Inoue, Kenichi ; Takayama, Toru ; Yuri, Masaaki ; Onozawa, Kazntoshi ; Ueda, Daisnke
Author_Institution :
Semicond. Co., Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
Abstract :
In this paper, we demonstrate Mg-doped AlGalnP LDs with high characteristic temperature. We found that abrupt Mg profiles can be obtained in quaternary alloys like AlGalnP, although significant memory effects are observed in GaAs. Based on this effect, we fabricated AlGalnP LDs with a highly Mg-doped cladding layer. As a result, reliable 650-nm-band LDs with characteristic temperature over 133 K are achieved.
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; indium compounds; magnesium; optical fabrication; semiconductor lasers; thermo-optical effects; 133 K; 650 nm; AlGaInP:Mg; GaAs; Mg-doped AlGaInP laser diode; cladding layer; memory effect; optical fabrication; quaternary alloy; temperature characteristics; Cities and towns; Diode lasers; Doping; Electrons; Gallium arsenide; Magnesium; Mass spectroscopy; Semiconductor devices; Temperature; Zinc;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253134
