Title :
Frequency-doubled GaAsSb/GaAs semiconductor disk laser emitting at 589 nm
Author :
Gerster, Eckart ; Hahn, Christian ; Lorch, Steffen ; Menzel, Susanne ; Unger, Peter
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
We present the first frequency-doubled yellow emitting GaAsSb/GaAs semiconductor disk laser also referred to as VECSELs. Using a solid-source MBE, a GaAsSb-based semiconductor disk laser has been grown on GaAs. The laser cavity is formed by a Bragg mirror and an external dielectric mirror. Pumping of the GaAsSb quantum wells is done optically by a laser beam. A nonlinear crystal is placed inside the external cavity for frequency doubling. In continuous operation, we achieved a maximum second-harmonic output power of 15 mW at a pump power of 2.1 W. The yellow laser emission at 589 nm was well suitable for sodium absorption spectroscopy. Additionally, we have demonstrated the first semiconductor disk laser emitting in the infrared range 1080-1200 nm.
Keywords :
gallium arsenide; infrared spectra; laser beams; laser cavity resonators; laser mirrors; molecular beam epitaxial growth; optical harmonic generation; optical materials; optical pumping; semiconductor quantum wells; sodium; surface emitting lasers; 1080 to 1200 nm; 15 mW; 2.1 W; 589 nm; Bragg mirror; GaAsSb-GaAs; Na; VECSEL; continuous operation; external dielectric mirror; frequency-doubling; laser beam; laser cavity; nonlinear crystal; optical pumping; pump power; quantum well; second-harmonic output power; sodium absorption spectroscopy; solid-source MBE; yellow emitting GaAsSb-GaAs semiconductor disk laser; Dielectrics; Frequency; Gallium arsenide; Laser excitation; Mirrors; Nonlinear optics; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253135
