Title :
Monolithic photoreceivers for 60 Gbit/s and beyond
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
An InP-based photoreceiver, comprising a waveguide-integrated photodiode and a distributed amplifier, is presented which allows DC-coupled interfacing to subsequent electronics. The O/E conversion capability up to 66 Gbit/s and a 40 Gbit/s BER measurement are shown.
Keywords :
III-V semiconductors; amplifiers; error statistics; indium compounds; monolithic integrated circuits; optical communication; optical receivers; optical waveguides; photodiodes; 40 Gbit/s; 60 Gbit/s; BER measurement; DC-coupled interface; InP; InP-based photoreceiver; O/E conversion capability; distributed amplifier; monolithic photoreceiver; waveguide-integrated photodiode; Bit error rate; Bit rate; Frequency conversion; Frequency measurement; Noise figure; Optical receivers; Optical signal processing; Optical transmitters; Optical waveguides; Radio frequency;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253140
