InAs/GaAs p–i–p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

Author

Park, M.S. ; Jain, Vinesh ; Lee, E.H. ; Kim, S.H. ; Pettersson, H. ; Wang, Qijie ; Song, J.D. ; Choi, W.J.

Author_Institution

Centre for Opto-Electron. Convergence Syst., Korea Inst. of Sci. & Technol. (KIST), Seoul, South Korea

Volume

50

Issue

23

fYear

2014

fDate

11 6 2014

Firstpage

1731

Lastpage

1733

Abstract

High-temperature operating performance of p-i-p quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In_0.15Ga_0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor quantum dots; semiconductor superlattices; AlGaAs-GaAs; In_0.15Ga_0.85As; InAs-GaAs; broad mid-wave infrared detection; dark current; heterostructure; high-temperature operating performance; optically active region; p-doped self-assembled quantum dots; p-i-p quantum dots-in-a-well infrared photodetectors; photoresponse; quantum wells; superlattice structure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.2437

Filename

6955053