Temperature effects on IGCT performance

Author

Wang, X. ; Caiafa, A. ; Hudgins, J. ; Santi, E.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

2

fYear

2003

fDate

12-16 Oct. 2003

Firstpage

1006

Abstract

The integrated gate-commutated thyristor (IGCT) is an advanced semiconductor device for high frequency, high power applications. This work presents a detailed discussion of experimental dynamic characteristics of IGCTs at ambient temperatures ranging from -40°C to 50°C. A lumped-charge physics-based IGCT model with full temperature response is also developed in this work. A chopper circuit with an inductive load is employed to test the IGCT switching behavior both experimentally and by simulation. Comparison between the experimental and simulation results is made and discrepancies are discussed.

Keywords

MOS-controlled thyristors; choppers (circuits); load (electric); semiconductor device models; semiconductor device testing; 40 to 50 C; IGCT; IGCT switching behavior; ambient temperatures; chopper circuit; high frequency; high power applications; inductive load; integrated gate-commutated thyristor; lumped-charge physics-based IGCT model; semiconductor device; temperature response; Cathodes; Choppers; Circuit simulation; Circuit testing; Frequency; Switches; Switching circuits; Temperature distribution; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the

Print_ISBN

0-7803-7883-0

Type

conf

DOI

10.1109/IAS.2003.1257663

Filename

1257663