• DocumentCode
    400708
  • Title

    Physical and reduced-order dynamic analysis of MEMS

  • Author

    De, S.K. ; Aluru, N.R.

  • Author_Institution
    Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
  • fYear
    2003
  • fDate
    9-13 Nov. 2003
  • Firstpage
    270
  • Lastpage
    273
  • Abstract
    In this paper, we first present an efficient physical level simulation method for the dynamic analysis of electrostatic micro-electromechanical systems (MEMS). This method is then used to analyze MEMS dynamics. Stiffness hardening or softening of MEM structures has been shown to depend both on the applied voltage and the geometry. The existence of multiple resonant peaks in the frequency response diagram has been presented. We have shown that a DC bias along with an appropriate AC bias can give fast switching at a considerably less peak power requirement. Finally, a reduced order model has been developed based on Karhunen-Loeve decomposition for the dynamic simulation of MEMS. Reduced order models are cheap in terms of memory and computational time and are needed to perform fast and efficient system-level composite circuit and micro-mechanical simulations.
  • Keywords
    electrostatic actuators; finite element analysis; frequency response; micromechanical devices; switching; AC bias; DC bias; Karhunen-Loeve decomposition; MEM softening; MEMS; computational time; electrostatic microelectromechanical systems; fast switching; frequency response diagram; micromechanical simulations; multiple resonant peaks; peak power requirement; physical level simulation method; reduced-order dynamic analysis; stiffness hardening; system-level composite circuit; Analytical models; Circuit simulation; Computational modeling; Electrostatic analysis; Geometry; Microelectromechanical systems; Micromechanical devices; Reduced order systems; Softening; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Aided Design, 2003. ICCAD-2003. International Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    1-58113-762-1
  • Type

    conf

  • DOI
    10.1109/ICCAD.2003.159700
  • Filename
    1257674