Title :
Manufacturing-aware physical design
Author :
Gupta, Puneet ; Kahng, A.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA
Abstract :
Ultra-deep submicron manufacturability impacts physical design (PD) through complex layout rules and large guard-bands for process variability; this creates new requirements for new manufacturing-aware PD technologies. The first part of this tutorial reviews PD complications and methodology changes notably in the detailed routing arena - that arise from subwavelength lithography and deep-submicron manufacturing (antennas, metal planarization and mask-wafer mismatch). Process variations and their sources are taxonomized for modeling and simulation. A framework of design for cost and value is described. The second part covers yield-constrained optimizations in PD, especially "beyond corners" approaches that escape today\´s pessimistic or even incorrect corner-based approaches. Statistical timing and noise analyses enable optimization of parametric yield and reliability. Yield-aware cell libraries and "analog" design rules (as opposed to "digital", 0/1 rules) can help designers explore yield-cost tradeoffs, especially for low-volume parts. We then examine performance impact-limited fill insertion which goes beyond mere capacitance rules. Modeling, objectives, and filling strategies are discussed. Finally, we discuss current and near-term prospects for the overall design-to-manufacturing PD methodology. Key aspects include better integrations with analysis and manufacturing interfaces, as well as cost-benefit tradeoffs for "regular" layout structures that are likely beyond 90 nm, cost optimizations for low-volume production, and the role of robust and/or stochastic optimization in PD.
Keywords :
circuit optimisation; design for manufacture; integrated circuit economics; integrated circuit layout; integrated circuit noise; integrated circuit yield; photolithography; timing; PD technologies; analog design rules; complex layout rules; design-to-manufacturing PD; large guard bands; manufacturing interfaces; physical design technologies; process variation; robust optimisation; statistical noise analysis; statistical timing analysis; stochastic optimization; subwavelength lithography; ultra deep submicron manufacturing; yield constrained optimizations; yield cost tradeoffs; Capacitance; Costs; Filling; Lithography; Manufacturing processes; Planarization; Routing; Semiconductor device modeling; Software libraries; Timing;
Conference_Titel :
Computer Aided Design, 2003. ICCAD-2003. International Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
1-58113-762-1
DOI :
10.1109/ICCAD.2003.159753