Implanted-ion dose variation from Si surface status of sub-nm scale on 90 nm ULSI process

Author

Kase, M. ; Kubo, T. ; Watanabe, K. ; Okabe, Kousuke ; Nakao, Hayato

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

33

Lastpage

35

Abstract

To make a shallow junction, understanding the influence of the Si surface status is quite important to achieve stable-dose implanted layers. The causes or dose variation can be a sub-nm screening/capping oxide and silicon loss, which originate from the wet chemical processes, the photo resist processes and the clean room environment. These phenomena are examined using SIMS, sheet resistance and the transistor characteristics of a 90 nm node of high end CMOS logic device.

Keywords

CMOS logic circuits; ULSI; elemental semiconductors; etching; ion implantation; photoresists; secondary ion mass spectra; semiconductor doping; silicon; surface contamination; 90 nm; 90 nm ULSI process; CMOS logic device; SIMS; Si surface; implanted-ion dose variation; shallow junction; sheet resistance; stable-dose implanted layers; transistor characteristics; wet chemical processes; CMOS technology; Chemical processes; Fabrication; Implants; Laboratories; Large scale integration; Surface resistance; Surface treatment; Ultra large scale integration; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1257931

Filename

1257931