Production worthy repeatability of spike anneals

According to the 2001 International Technology Roadmap for Semiconductors two of the key challenges for the source/drain extension junction at the 100 nm node and beyond are to produce junctions between 19 and 31 nm with sheet resistance values less than 550 ohm/sq. for low parasitic source/drain series resistance. In production this must be accomplished with both repeatability and excellent uniformity across the wafer. Therefore the sheet resistance and junction depth repeatability for fast spike anneals is one of the greatest challenges for rapid thermal annealing equipment manufacturers. This paper summarizes the latest results for ultra-low energy implants employing conventional beamline (B and BF₂) or pulsed plasma doped (P²LAD) BF₃ wafers (without pre-amorphization) and the flash-anneal controller (FAC) technology for rapid thermal processing. The data are analyzed and discussed with respect to the sheet resistance versus junction depth metrics (R_S/X_J). The data show the sensitivity of the R_S/X_J pair to the peak width at T_Peak -50 K and the effect of the peak temperature itself. The uniformity and repeatability results also demonstrate the production-worthiness or the FAC technology for the 100 nm technology node.