• DocumentCode
    400838
  • Title

    Advantages of single and mixed species chaining for high productivity in high and mid-energy implantation

  • Author

    Nitodas, S.F. ; Ameen, M.S. ; Rubin, Leonard M.

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    Chaining implant steps improve device performance and yield, enhance throughput, and reduce manufacturing time, cost and risk. A typical implant chain consists of two to four steps of varying energy, dose and Implant angle, and may also include multiple species. High-energy (HE) well implants, including threshold voltage (Vt) adjusts, are Ideal candidates for chaining due to their location in the process flow, similarity in mask sets, and beam current requirements. In the present study, we prove feasibility of same species"" and ""mixed species"" chains with high throughput in multi-wafer ion implanters. Throughput models have been generated to examine how mixed species chains improve machine productivity. Optimization of chains is achieved through characterization of the hardware and optimization of the software to allow for flexibility In setting up and running chains. Measurements of energetic and surface contamination in the mixed species chains demonstrate the implanter\´s capability of running chains without any contamination problems. Results on tune/transition times between chain recipes are presented, and subsequent throughput enhancements are discussed.
  • Keywords
    ion implantation; semiconductor doping; beam current requirements; device performance; high productivity; high-energy implantation; implant angle; manufacturing cost; manufacturing risk; mask sets; mid-energy implantation; mixed species chaining; process flow; reduce manufacturing time; single species chaining; threshold voltage; throughput; yield; Contamination; Costs; Energy measurement; Hardware; Helium; Implants; Manufacturing; Productivity; Threshold voltage; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1257966
  • Filename
    1257966