Title :
Characterization of charging damage in plasma doping
Author :
Henke, Daniel ; Walther, Sven ; Weeman, J. ; Dirnecker, T. ; Ruf, Andreas ; Beyer, A. ; Lee, Kahyun
Abstract :
MOS capacitors with attached antennas of different size and shape were used to characterize the charging damage in PLAsma Doping (PLAD). Additional resist patterns offer the possibility to investigate the impact of photoresist on charging damage. This test of PLAD implants uses a number of plasma current densities and implant pulse widths to explore a wide range of process conditions. The charging damage was studied for process variations of energy, dose and duty cycles for different dopants.
Keywords :
MOS capacitors; ion implantation; photoresists; semiconductor doping; MOS capacitors; charging damage; dose; duty cycles; energy; photoresist; plasma doping; resist patterns; Implants; Integrated circuit technology; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Pulse measurements; Semiconductor device doping; Testing; Voltage;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257973
