Title :
In-line implant/anneal module monitoring of ultra shallow junctions
Author :
Borden, P. ; Gillespie, P. ; Al-Bayati, A. ; Lazik, C.
Abstract :
Carrier Illumination™ provides non-destructive pre/post anneal characterization of doping processes on patterned wafers. The driving requirement for this measurement and its theory of operation and sensitivities are discussed. Correlation to key process parameters is shown. Measurements are compared on bare and patterned wafers, indicating bare wafer measurements may not be sufficient to indicate the process condition and uniformity on product.
Keywords :
annealing; ion implantation; semiconductor doping; Carrier Illumination; bare wafers; in-line implant/anneal module monitoring; key process parameters; patterned wafers; ultra shallow junctions; Annealing; Doping; Electrical resistance measurement; Implants; MOSFETs; Monitoring; Optical refraction; Process control; Temperature; Testing;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257974
