Title :
Dose monitoring of heavy ion implantation by Therma-Wave signal
Author :
Sano, Makoto ; Harada, Masaaki ; Kabasawa, Mitsuaki ; Sato, Fumiaki ; Sugitani, P.
Abstract :
Dosimetry of ion implantation is monitored mainly by Therma-Wave (TW) signals for low-medium dose ranges. Repeatability and uniformity of TW signals for indium (In) and antimony (Sb) implantation were researched in order to improve dose monitoring accuracy. It was found that TW signals were influenced considerably by implant conditions, wafer surface status, and TW measurement parameters. Because TW signals have high dose sensitivity in some ranges of In and Sb implantation, TW signals became a good tool of dose monitoring of such heavy ions by establishing appropriate management of the above conditions.
Keywords :
antimony; doping profiles; indium; ion implantation; semiconductor doping; In; Sb; Therma-Wave signal; dose monitoring; heavy ion implantation; high dose sensitivity; implant conditions; low-medium dose ranges; repeatability; uniformity; wafer surface status; Annealing; Atmospheric measurements; Curve fitting; Dosimetry; Implants; Indium; Ion beams; Ion implantation; Manufacturing; Monitoring;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257985
