DocumentCode :
400857
Title :
Stability improvement of Therma-Wave signal by pre-annealing
Author :
Harada, Masaaki ; Sano, Makoto ; Izutani, H.
fYear :
2002
fDate :
27-27 Sept. 2002
Firstpage :
252
Lastpage :
255
Abstract :
In this study, we investigated causes of fluctuation of Therma-Wave(TW) signals in order to improve the stability of TW signal measurement. In case of heavy ion implantation, several causes were found, and pre-annealing before implantation showed the most effective contribution to improve the fluctuation. It is from 2.13% to 0.41% (1σ) in case of In+ implantation. This paper presents innovative improvement of the TW signal stability by the pre-annealing and other methods.
Keywords :
ion implantation; semiconductor doping; In+; Therma-Wave signal; heavy ion implantation; pre-annealing; stability improvement; Conductivity measurement; Dosimetry; Fluctuations; Ion implantation; Manufacturing; Measurement standards; Process control; Semiconductor devices; Signal processing; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
Type :
conf
DOI :
10.1109/IIT.2002.1257986
Filename :
1257986
Link To Document :
بازگشت