Title :
Dose theory and pressure compensation on Axcelis GSD high current implanter
Author :
Kraupner, J. ; Kyek, Andreas ; Vogl, J. ; Weiss, Steven
Abstract :
Neutralization of ions by charge changing interactions with gas in the beam line or end station of ion implant systems may lead to wrong dose and bad uniformity on the processed wafers. In this paper the dosimetry and the pressure compensation on Axcelis GSD high current implanter are discussed based on detailed analysis of dose_dat files. Theoretical models for pressure compensation are reviewed together with a new model in order to describe the pressure compensation as a function of dopant and energy. A alternative method of determination of pressure compensation factor pcomp is given, and problems in practice and results from residual gas analysis are discussed.
Keywords :
ion implantation; semiconductor doping; Axcelis GSD high current implanter; bad uniformity; beam line; charge changing interaction; dose theory; dosimetry; end station; pressure compensation; pressure compensation factor; processed wafers; residual gas analysis; wrong dose; Current measurement; Dosimetry; Filters; Implants; Ion beams; Resists; Semiconductor device modeling; Semiconductor process modeling; Temperature; Vacuum systems;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257988
