Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments

The progressive microelectronics downscaling requires ultra-shallow junctions (USJ) in order to produce future devices. Dynamic-SIMS (D-SIMS) has been widely used to analyse dopant implants, but at the present the USJ characterisation is one of the major challenges for SIMS (secondary ion mass spectrometry) depth profiling. In this work, SIMS depth profiles have been carried out on arsenic implants at different energies in order to evaluate the most suitable analytical conditions. Analyses have been performed using both magnetic sector and time-of-flight mass spectrometer instruments.