Precision halo control with antimony and indium on Axcelis medium current ion implanters

Heavy ions such as indium and antimony are increasingly being used for high tilt angle halo implants needed for control of short channel effects in advanced CMOS devices. Precise angular control of these implants is required, especially when masking due to high tilt shadowing can occur, or when device geometry requires an implant at a channeling condition. This paper will describe the antimony and indium process performance of Axcelis Technologies´ medium current serial implanters, the 8250_HT and the MC3. Parallelism and angular control data, uniformity results, and throughput versus energy for antimony and indium implants are presented.