Seamless transferability of doping processes between the VIISta platform of ion implanters

The VIISta platform of implanters provides single wafer implantation over the entire energy and dose range for ≤130nm CMOS technology. These implanters feature common hardware and design principles including beam incidence angle control, dosimetry, and end station design. This approach enables complete transferability of processes between the implanters for the overlapping dose-energy ranges and allows maximum flexibility for manufacturing leading to lowered cost of ownership. A complete process transparency requires exact matching of the dopant profiles and this capability will be illustrated with well, halo, V_T, and extension implants. In addition, we will also demonstrate that single wafer design of the VIISta platform eliminates sources of defects and ensures risk-free process transfer.