Influence of antenna shape and resist patterns on charging damage during ion implantation

Author

Dirnecker, T. ; Frey, Lothar ; Bauer, A.J. ; Ryssel, H. ; Ruf, Andreas ; Henke, Daniel ; Beyer, A.

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

291

Lastpage

294

Abstract

MOS capacitors with attached poly electrodes (antennas) were designed with various antenna shapes for the evaluation of charging damage during ion implantation. Different resist patterns were implemented to investigate the influence of photoresist on charging damage. The influence of dose, beam current, and ion energy was studied for p-type and n-type structures. For the first time, the influence of all these parameters on charging damage was analyzed using the same set of test devices. The influence of beam current and ion energy on charging damage was found to be different for p-type and n-type devices. The substrate effect on charging damage was in contrast to previously reported data for most of the implantation parameters under investigation.

Keywords

MOS capacitors; antennas; ion implantation; semiconductor doping; MOS capacitors; antenna shape; attached poly electrodes; beam current; charging damage; dose; ion energy; ion implantation; resist patterns; Electrodes; Fingers; Floods; Ion beams; Ion implantation; Leakage current; MOS capacitors; Resists; Shape; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1257996

Filename

1257996