DocumentCode :
400870
Title :
Performance of RF plasma flood gun for medium current implanter
Author :
Hamamoto, Nariaki ; Sakai, Shin´ichi ; Ikejiri, T. ; Tanjyo, Masayasu
fYear :
2002
fDate :
27-27 Sept. 2002
Firstpage :
307
Lastpage :
310
Abstract :
We have developed a new PFG apparatus using a RF discharge. In this paper, we show the performance of the PFG under the typical implantation condition in medium ion implanter. The measured charging characteristics with CHARM2™ and MOS capacitor TEG surpass those of the conventional PFG with filament. Also the present PFG doesn´t degrade other implantation qualities such as dose uniformity, dose shift and metal contamination. In addition, the absence of filament can reduce the maintenance time. The aimed running time is more than 2,000 hours.
Keywords :
ion implantation; ion sources; plasma sources; semiconductor doping; 2000 h; CHARM2™; MOS capacitor TEG; RF plasma flood gun; dose shift; dose uniformity; maintenance time; medium current implanter; metal contamination; running time; Contamination; Electrons; Floods; MOS capacitors; Magnetic fields; Magnetic separation; Plasma immersion ion implantation; Plasma stability; Power supplies; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
Type :
conf
DOI :
10.1109/IIT.2002.1258000
Filename :
1258000
Link To Document :
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