Versatile medium ion implanter EXCEED2300V

Author

Fujisawa, Hiroyuki ; Matsumoto, Tad ; Nakaya, M. ; Yamashita, Takayoshi ; Miyamoto, Naoyuki ; Miyabayashi, K. ; Kobayashi, Takehiko ; Yamamoto, Yusaku ; Nakamura, Mitsutoshi ; Nagayama, Tsutomu ; Kinoyama, T. ; Iwasawa, K. ; Nagai, N. ; Naito, Masakazu ;

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

377

Lastpage

382

Abstract

New dopant species, such as indium and antimony, are needed for the modem semiconductor manufacturing processes. We have developed a new ion implanter capable of implanting single charge In and Sb up to 200keV, which enhances the versatility of modern doping process like halo and pocket implantation. This versatile ion implanter EXCEED2300V has new beam line components with field proven technologies inherited from EXCEED2300H which ensure the precise implant such as no energy contaminant implantation, precise parallel beam implantation. In this paper, the detailed machine performance is reviewed.

Keywords

ion implantation; semiconductor doping; 200 keV; halo implantation; pocket implantation; precise parallel beam implantation; versatile medium ion implanter EXCEED2300V; Contamination; Floods; Implants; Indium; Ion beams; Particle beams; Plasma applications; Plasma properties; Solids; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258019

Filename

1258019