Introducing the ORion II NV7392 flat panel ion doping system

Author

Sato, Mitsuhisa ; Maruyama, Mihoko ; Sakanishi, H. ; Isobe, Eisuke ; Yoshida, Kenta ; Nishihara, Tokihiro ; Ochi, Takao ; Inada, Koji ; Murata, Hidekazu ; Brailove, A. ; Tanaka, T.

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

383

Lastpage

386

Abstract

The next generation of the ORion flat panel ion doping system has been developed in order to meet evolving industry requirements for implantation into substrates that now exceed one square meter in area. The ORion II ion doping system scales-up both the linear ribbon-beam ion source, and the high-throughput substrate handling architecture of the first-generation ORion machine. The ORion II is capable of processing of substrates up to 1000×1200 mm, and can deliver linear beam current densities of 700 particle μA/cm of phosphorous and 300 particle μA/cm of boron. In addition to describing the machine architecture, we present data on the beam current uniformity, implant It,, throughput, beam current dynamic range and process-switching performance.

Keywords

flat panel displays; ion implantation; ion sources; process control; semiconductor device manufacture; thin film transistors; ORion II NV7392; accurate dose control; beam current dynamic range; beam current uniformity; flat panel ion doping system; high-throughput substrate handling architecture; high-volume manufacturing; ion implantation; linear ribbon-beam ion source; process-switching performance; substrate temperature control; thin-film transistors; tool productivity; Current density; Doping; Ion beams; Ion sources; Manufacturing; Particle beams; Substrates; Thin film transistors; Throughput; Toy industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258020

Filename

1258020