orig-research

Author

Miyatake, N. ; Tsuji, Yukihide ; Itou, Koichi ; Hoshijima, H. ; Shimamura, Kohei

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

387

Lastpage

390

Abstract

In 1998 at ITT12, we reported development of a commercial mass analyzed ion implanter for implanting 600mm wide glass substrates for LTPSTFT-LCD (Low Temperature Polycrystalline Silicon Thin Film Transistor - Liquid Crystal Display). Now, we announce a 720 mm beam width, with 50% increase in delivered beam current and a 25% reduction in tool footprint. Boron and phosphorous beam current have been increased by changing to tungsten components, and reduced beam line pressure. Tool footprint has been reduced by developing a vertical substrate handling system.

Keywords

boron; flat panel displays; ion implantation; ion sources; liquid crystal displays; phosphorus; semiconductor device manufacture; silicon; thin film transistors; Si:B; Si:P; accurate implantation; high current ion implanter; ion source; low temperature polysilicon TFT-LCD; process chamber; reduced beam line pressure; tool footprint; tungsten components; vertical substrate handling system; wide beam ion implanter; Doping; Glass; Implants; Ion beams; Liquid crystal displays; Plasma materials processing; Plasma sources; Substrates; Thin film transistors; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258021

Filename

1258021