Title :
Boron bromide as a source precursor for low energy applications
Abstract :
The use of boron tri-bromide as a source precursor for low energy boron implantation is studied in this work. Details of gas delivery system, beam purity and running performance have been investigated for a 75keV molecular implant to give an equivalent boron energy of 5keV. The behavior of the Br during thermal processing is compared to that of F derived from a BF2 implant and is seen to be less mobile during post implant rapid thermal annealing with implications to gate oxide performance.
Keywords :
boron; boron compounds; ion implantation; rapid thermal annealing; secondary ion mass spectra; 5 keV; 75 keV; BBr3; SIMS analysis; Si:B; beam purity; boron tribromide source precursor; equivalent boron energy; gas delivery system; gate oxide performance; low energy boron implantation; molecular implant; rapid thermal annealing; running performance; shallow junctions; Argon; Boron; Implants; Ion beams; Ion sources; Performance analysis; Plasma measurements; Plasma sources; Rapid thermal annealing; Rapid thermal processing;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258023
