• DocumentCode
    400889
  • Title

    Boron bromide as a source precursor for low energy applications

  • Author

    Gwilliam, R.

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    The use of boron tri-bromide as a source precursor for low energy boron implantation is studied in this work. Details of gas delivery system, beam purity and running performance have been investigated for a 75keV molecular implant to give an equivalent boron energy of 5keV. The behavior of the Br during thermal processing is compared to that of F derived from a BF2 implant and is seen to be less mobile during post implant rapid thermal annealing with implications to gate oxide performance.
  • Keywords
    boron; boron compounds; ion implantation; rapid thermal annealing; secondary ion mass spectra; 5 keV; 75 keV; BBr3; SIMS analysis; Si:B; beam purity; boron tribromide source precursor; equivalent boron energy; gas delivery system; gate oxide performance; low energy boron implantation; molecular implant; rapid thermal annealing; running performance; shallow junctions; Argon; Boron; Implants; Ion beams; Ion sources; Performance analysis; Plasma measurements; Plasma sources; Rapid thermal annealing; Rapid thermal processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1258023
  • Filename
    1258023
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400889