• DocumentCode
    400895
  • Title

    Varian semiconductor indirectly heated cathode sources

  • Author

    Olson, J.C. ; Maciejowski, P.E. ; Shengwu Chang

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    417
  • Lastpage
    419
  • Abstract
    Indirectly heated cathode ion sources have been developed for the VIISta 3000 and 810HP series ion implanters. The sources greatly increase lifetime and maintain or improve beam current output for all species and charge states. The sources are designed with common consumables. Source lifetime, beam current, stability, and tuning data are presented.
  • Keywords
    ion implantation; ion sources; semiconductor doping; VIISta 3000; VIISta 810HP; Varian semiconductor indirectly heated cathode sources; beam current output; charge states; ion implanters; lifetime; species; stability; tuning data; Cathodes; Electron emission; Ion sources; Life testing; Lifetime estimation; Maintenance; Plasma sources; Plasma temperature; Stability; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1258029
  • Filename
    1258029
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400895