Title :
Varian semiconductor indirectly heated cathode sources
Author :
Olson, J.C. ; Maciejowski, P.E. ; Shengwu Chang
Abstract :
Indirectly heated cathode ion sources have been developed for the VIISta 3000 and 810HP series ion implanters. The sources greatly increase lifetime and maintain or improve beam current output for all species and charge states. The sources are designed with common consumables. Source lifetime, beam current, stability, and tuning data are presented.
Keywords :
ion implantation; ion sources; semiconductor doping; VIISta 3000; VIISta 810HP; Varian semiconductor indirectly heated cathode sources; beam current output; charge states; ion implanters; lifetime; species; stability; tuning data; Cathodes; Electron emission; Ion sources; Life testing; Lifetime estimation; Maintenance; Plasma sources; Plasma temperature; Stability; Voltage;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258029
