DocumentCode
400906
Title
orig-research
Author
Isaacs, B.W. ; Seekon, D.R. ; Mayer, J.J.
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
459
Lastpage
462
Abstract
In an ion implant module, the environmental and physical control systems are both costly and highly complex. Both the total cost and the safe operation are high level Issues in the wafer fab environment. An ion implanter utilizes toxic source gas materials (i.e. arsine, phosphine and boron trifluoride). The proper handling of these materials and environmental issues related to safety, focusing on the overall cost effective and cost efficient method of operation are of paramount concern. This paper explores the key aspects of National Semiconductor´s (Arlington, Texas) program for HGM (hazardous gas management) and total strategy using ATMI´s VAC/spl trade/ and SDS/spl reg/ systems. This paper will review aspects and issues with both the VAC package and SDS gas sources in terms of capacity, cost per usable gram, safety, environmental issues and actual performance and potential implanter performance improvements as widely reported within the module.
Keywords
environmental factors; ion implantation; safety; semiconductor doping; SDS gas sources; SDS® gas sources; VAC package; VAC™ gas sources; actual performance; cost per usable gram; environmental control systems; environmental issues; hazardous gas management strategy; ion implant module; physical control systems; potential implanter performance improvements; safe operation; safety; total cost; toxic source gas materials; Boron; Cleaning; Contamination; Costs; Engine cylinders; Environmental management; Frequency; Implants; Safety; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1258040
Filename
1258040
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