Performance characteristics of the Varian Semiconductor VIISta 3000 single wafer high energy ion implanter

The VIISta 3000, Varian Semiconductor´s latest generation ion implanter, is designed to meet high energy and medium current implant requirements for advanced processes for 200mm and 300mm wafers. The system couples the advantages of the Tandetron™ beam line architecture of the Kestrel MeV implanter with the advanced, field-proven, single wafer, parallel scanned beam design common to the VIISta platform of implanters. The improved tandem design of the VIISta 3000 and the universal VIISta end station enables precise placement of the dopant in the silicon through a combination of accurate control of the final energy coupled with total incident ion angle control. This paper will highlight these key process advantages and additional performance capabilities of the VIISta 3000 for high volume device manufacturing.