Title :
He++ implants using the EHPi-500 implanter
Author :
Platow, Wilhelm ; Todorov, Stan ; Hamilton, I.
Abstract :
The capability of He++ implants for the medium current EHPi-500 implanter was developed. The operating characteristics were determined by varying tool configurations. Different helium gas mixtures, filament design and filament insulator materials were tested. Other hardware modifications such as the use of a 250V/4A arc power supply were necessary because helium has the highest ionization potential in the periodic table. H2+ contamination can be avoided when running doubly charged helium by using 3He as feed gas. There is no difference in the operating characteristics between 3He++ and 4He++ implants. In order to extract 80μA of He++ beam the tool delivered about 15mA of He+ beam, demonstrating the excellent performance under singly charged helium operating conditions. A source life of 100-120 hrs was achieved for running He++ implants.
Keywords :
focused ion beam technology; helium ions; ion implantation; semiconductor doping; 100 to 120 h; 15 mA; 250 V; 4 A; 80 muA; EHPi-500 implanter; H2+ contamination; He; He gas mixtures; He++ implants; filament design; filament insulator materials; hardware modifications; ionization potential; operating characteristics; tool configurations; Contamination; Feeds; Gas insulation; Hardware; Helium; Implants; Insulator testing; Ionization; Materials testing; Power supplies;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258060
