• DocumentCode
    400944
  • Title

    The mainstreaming of SOI

  • Author

    Celler, G.K.

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    637
  • Lastpage
    640
  • Abstract
    Silicon-on-Insulator (SOI) technology has recently moved from niche applications into the mainstream of the IC industry. Circuits built on SOI substrates provide higher switching speed and/or reduced power consumption. As device dimensions are reduced into sub-50nm regime, proper device scaling will increasingly rely on SOI structures.
  • Keywords
    annealing; buried layers; clean rooms; integrated circuit manufacture; ion implantation; silicon-on-insulator; IC industry mainstream; SIMOX; SOI substrates; SOI technology; Smart Cut; buried oxide; cleanroom; direct synthesis; high temperature annealing; ion implantation; layer transfer; production facility; wafer technology; Circuits; Crystallization; Fabrication; Hydrogen; Ion implantation; Manufacturing; Semiconductor films; Silicon on insulator technology; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1258086
  • Filename
    1258086
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400944