Title :
The mainstreaming of SOI
Abstract :
Silicon-on-Insulator (SOI) technology has recently moved from niche applications into the mainstream of the IC industry. Circuits built on SOI substrates provide higher switching speed and/or reduced power consumption. As device dimensions are reduced into sub-50nm regime, proper device scaling will increasingly rely on SOI structures.
Keywords :
annealing; buried layers; clean rooms; integrated circuit manufacture; ion implantation; silicon-on-insulator; IC industry mainstream; SIMOX; SOI substrates; SOI technology; Smart Cut; buried oxide; cleanroom; direct synthesis; high temperature annealing; ion implantation; layer transfer; production facility; wafer technology; Circuits; Crystallization; Fabrication; Hydrogen; Ion implantation; Manufacturing; Semiconductor films; Silicon on insulator technology; Substrates; Temperature;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258086
