DocumentCode :
400948
Title :
Optical properties and applications of heavily Fe implanted InP
Author :
Cesca, T. ; Gasparotto, A. ; Fraboni, B. ; Priolo, Francesco ; Moreira, Edmilson C. ; Scamarcio, G.
fYear :
2002
fDate :
27-27 Sept. 2002
Firstpage :
653
Lastpage :
656
Abstract :
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating layers with the desired characteristics. The electrical properties of these structures have been investigated by means of current-voltage measurements and deep level analyses; compensation of n-doping up to 1019 cm-3 has been verified. Electroluminescence emission has also been obtained from the compensated samples with the highest substrate doping concentration up to the temperature of 260 K.
Keywords :
III-V semiconductors; electroluminescence; heavily doped semiconductors; indium compounds; ion implantation; iron; semiconductor doping; 260 K; InP:Fe; current-voltage measurements; deep level analyses; electrical properties; electroluminescence emission; heavily Fe implanted InP; optical properties; substrate doping concentration; Current measurement; Doping; Electric variables measurement; Electroluminescence; Extraterrestrial measurements; Implants; Indium phosphide; Iron; Optical sensors; Physics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
Type :
conf
DOI :
10.1109/IIT.2002.1258090
Filename :
1258090
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=400948
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