• DocumentCode
    400955
  • Title

    Activation behavior of BF2+ implants in RTP annealed silicon

  • Author

    Chang, Kuo-Pin ; Robinson, Doug

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    686
  • Lastpage
    689
  • Abstract
    The sheet resistance (Rs) initially decreases with increasing BF2+ dose for implants exceeding the amorphization dose. This trend reverses after the implanted dose reaches a certain limit. Further dose increase results in a higher Rs and a deeper junction, without offering additional benefits. Fluorine gettered at implant-induced defect sites is responsible for this undesired behavior. Experimental results show that gettered fluorine and boron-fluorine bonds, formed at heavily damaged crystal sites, reduce boron activation.
  • Keywords
    boron; electrical resistivity; elemental semiconductors; fluorine; getters; ion implantation; rapid thermal annealing; semiconductor doping; silicon; BF2+ implants; RTP annealed Si; Si:B; Si:BF2; activation behavior; amorphization dose; gettered; heavily damaged crystal sites; implant-induced defect sites; sheet resistance; BiCMOS integrated circuits; Boron; Furnaces; Implants; Instruments; Ion implantation; Rapid thermal annealing; Scalability; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1258098
  • Filename
    1258098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400955