High quality optical thin film formation with low energy gas cluster ion beam irradiation

Author

Toyoda, Noriaki ; Yamada, Isao

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

701

Lastpage

704

Abstract

O₂ gas cluster ion beam (O₂-GCIB) assisted depositions were employed to deposit high quality dielectric films (Ta₂O₅, Nb₂O₅ and SiO₂). The optimum irradiation energy and ion current density for Ta₂O₅ and Nb₂O₅ film were 5 to 9 keV and 0.5 μA/cm², respectively. The Nb₂O₅/SiO₂ films deposited with O₂-GCIB irradiation showed very uniform and dense structures without columnar or porous structures. Due to the significant surface roughness improvement effect of GCIB, the interface and top surface of Nb₂O₅/SiO₂ multi-layer were quite flat. The interference filter deposited with O₂-GCIB assist deposition was very stable and there was no shift of wavelength before and after environmental tests. As O₂-GCIB is equivalently very low-energy ion beam and is able to deposit flat and dense amorphous films at low substrate temperature, it suitable for deposition of multi-layered films where low-energy assisting ions are required.

Keywords

electron beam deposition; interference filters; ion beam assisted deposition; niobium compounds; optical multilayers; refractive index; silicon compounds; surface roughness; tantalum compounds; Nb₂O₅; SiO₂; Ta₂O₅; acceleration energy dependence; cluster ion beam assisted depositions; cross-sectional SEM; dielectric films; electron beam evaporator; high quality film formation; interference filter; ion current density; low energy gas cluster ion beam irradiation; multilayered films; optical thin film formation; optimum irradiation energy; refractive index; surface roughness improvement; uniform dense structures; Current density; Dielectric films; Filters; Interference; Ion beams; Niobium; Optical films; Optical surface waves; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258102

Filename

1258102