Ion implantation and dynamic annealing effects in perovskite oxides

Application of keV-MeV ion implantation to perovskite oxides can be summarized in three different research topics: (1) to Induce controlled defects and dopants in High Tc Superconducting oxides (HTS); (2) modify electronic conductivity, ionic conductivity, and oxygen diffusivity in Solid Oxide Fuel Cell (SOFC) materials; and (3) modify the magnetoresistance prosperities in Colossal Magnetoresistance (CMR) oxides. Patterning the HTS films for HTS electronic devices fabrication is another well known application of ion implantation. This paper will mainly summarize and review the author work in topics (1) and (2). It should be noted that previous ion implantations into oxides were carried out at room temperature and the materials had been highly damaged or amorphitized. Even post-irradiation annealing will result in a more granular material than the initial material, leading to deterioration in material quality. It is observed that ion implantation of perovskite HTS thin films and oxide single crystals at elevated temperatures can induce dynamic annealing effects and crystal structure of the oxides can be maintained after the high dose implantation. Therefore, ion implantation at elevated temperatures provide an alternative route for modifying perovskite oxides.