DocumentCode :
401463
Title :
In-plane polarization dependence of gain in strained quantum-wire lasers with strain-compensating barriers
Author :
Haque, Anisul ; Maruyama, Takeo ; Yagi, Hideki ; Sano, Takuya ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fYear :
2003
fDate :
14-16 Oct. 2003
Firstpage :
7
Lastpage :
8
Abstract :
In-pane polarization dependence of gain in compressively strained quantum-wire (Q-wire) lasers with strain-compensating barriers (SC) is investigated. Strained Q-wire lasers with SC barriers and a cavity normal to wire axis should provide minimum transparency carrier density. In moderately wide Q-wires, highest peak material gain is obtained with lattice-matched barriers when the cavity is parallel to the wire axis. Polarization dependence of the gain in the presence of elastic strain relaxation shows non-trivial dependence on wire width due to a complicated interaction between elastic strain relaxation and quantum size effects.
Keywords :
carrier density; quantum well lasers; semiconductor quantum wires; size effect; cavity; elastic strain relaxation; in-plane polarization; lattice-matched barriers; material gain; quantum size effect; strain-compensating barriers; strained quantum-wire lasers; transparency carrier density; Capacitive sensors; Charge carrier density; Indium phosphide; Laser modes; Laser theory; Optical polarization; Spontaneous emission; Tellurium; Wire; Yagi-Uda antennas;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
Type :
conf
DOI :
10.1109/NUSOD.2003.1259027
Filename :
1259027
Link To Document :
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