Application of band theory to experimental eigen-state energies of un-doped InGaAs quantum wells lattice-matched to InP

Author

Tanaka, K. ; Kotera, N. ; Nakamura, H.

Author_Institution

Hiroshima City Univ., Japan

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

9

Lastpage

10

Abstract

Nonparabolic subband structure of InGaAs/InAlAs quantum wells (QWs) was studied theoretically and experimentally. In this paper, nonparabolic effective masses of electrons and band offset of InAlAs barriers were experimentally deduced from eigen-states of conduction subbands confined within the two-dimensional InGaAs QWs. As the dispersion relations for electron, light hole and hole subbands were obtained using the envelope function approximation taking into account band nonparabolicity, a simple way to design was proposed.

Keywords

III-V semiconductors; band structure; band theory; crystal structure; dispersion relations; eigenvalues and eigenfunctions; function approximation; gallium arsenide; indium compounds; photoconductivity; photodetectors; semiconductor quantum wells; InAlAs barriers; InGaAs-InAlAs-InP; InGaAs/InAlAs quantum wells; band offset; band theory; conduction subbands; dispersion relations; effective masses; eigenstate energies; envelope function approximation; hole subbands; light detectors; subband structure; Cities and towns; Dispersion; Effective mass; Electrons; Function approximation; Indium gallium arsenide; Indium phosphide; Laboratories; Photoconductivity; Quantum mechanics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259028

Filename

1259028