Simulation and design of an active MQW layer with high static gain and absorption modulation

We present detailed theoretical and experimental investigations on gain and absorption spectra of multi-type AlGaInAs QW structures in the 1.3 μm wavelength regime. Such QW combination offer the possibility of efficient forward and reverse operation, e.g. as required for monolithically integrated laser-modulator devices. Measurement results are in good agreement with theoretical predictions, achieving a basic modal absorption as low as 60 cm^-1, a maximum absorption change of 100 cm&^-1V^-1 and a DFB threshold current of 17 mA at room temperature. With the developed procedure and extracted parameters, a powerful tool is available to optimize the static gain and absorption modulation of single-and multi-type AlGaInAs QWs.