Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes

Author

Darja, Jesse ; Narata, Shinichi ; Chen, Nong ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

25

Lastpage

26

Abstract

With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 μm wavelength is illustrated. Prior to the actual simulation, the materials´ parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.

Keywords

III-V semiconductors; Taguchi methods; aluminium compounds; gallium arsenide; indium compounds; optimisation; quantum well lasers; semiconductor device models; semiconductor heterojunctions; semiconductor laser arrays; semiconductor quantum wells; 1.3 mum; InAlGaAs-InP; InAlGaAs/lnP MQW laser diodes; L-I measurements; LASTIP; Taguchi method; design of experiments; design optimization; device simulator; orthogonal arrays; Area measurement; Design optimization; Diode lasers; Indium phosphide; Optical arrays; Optical design; Optical materials; Quantum well devices; Semiconductor laser arrays; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259034

Filename

1259034