A TCAD calibration methodology

Author

Laino, V. ; Pfeiffer, Michael ; Fichtner, Wolf

Author_Institution

Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

29

Lastpage

30

Abstract

A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical optimization tools. The device under investigation is a molecular beam epitaxy (MBE) grown InGaAs/AlGaAs narrow stripe laser with graded-index carrier confinement (GRICC) and a single quantum-well (SQW) active region.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor device models; semiconductor process modelling; semiconductor quantum wells; technology CAD (electronics); DESSIS-Laser; GENESISe; InGaAs-AlGaAs; InGaAs/AlGaAs narrow stripe laser; TCAD calibration methodology; device design; graded-index carrier confinement; laser simulation calibration; laser simulator; single quantum-well active region; Calibration; Carrier confinement; Computational modeling; Laboratories; Laser modes; Molecular beam epitaxial growth; Optical design; Poisson equations; Predictive models; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259036

Filename

1259036