Title :
A TCAD calibration methodology
Author :
Laino, V. ; Pfeiffer, Michael ; Fichtner, Wolf
Author_Institution :
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical optimization tools. The device under investigation is a molecular beam epitaxy (MBE) grown InGaAs/AlGaAs narrow stripe laser with graded-index carrier confinement (GRICC) and a single quantum-well (SQW) active region.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor device models; semiconductor process modelling; semiconductor quantum wells; technology CAD (electronics); DESSIS-Laser; GENESISe; InGaAs-AlGaAs; InGaAs/AlGaAs narrow stripe laser; TCAD calibration methodology; device design; graded-index carrier confinement; laser simulation calibration; laser simulator; single quantum-well active region; Calibration; Carrier confinement; Computational modeling; Laboratories; Laser modes; Molecular beam epitaxial growth; Optical design; Poisson equations; Predictive models; Semiconductor process modeling;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259036
