DocumentCode
401471
Title
Designing high-power single-frequency lasers
Author
Wenzel, Hans
Author_Institution
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
fYear
2003
fDate
14-16 Oct. 2003
Firstpage
31
Lastpage
34
Abstract
The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 μm is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; laser frequency stability; optical fabrication; ridge waveguides; semiconductor device models; semiconductor process modelling; waveguide lasers; DFB lasers; GaAs-based ridge waveguide; device structure; fabrication procedure; high-power single-frequency lasers; Bragg gratings; Distributed Bragg reflectors; Distributed feedback devices; Equations; Laser feedback; Laser modes; Optical coupling; Optical design; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN
0-7803-7992-6
Type
conf
DOI
10.1109/NUSOD.2003.1259037
Filename
1259037
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