Thermodynamic designed energy model

Author

Bandelow, U. ; Gajewski, H. ; Hünlich, R.

Author_Institution

Weierstras Inst. for Appl. Anal. & Stochastics, Berlin, Germany

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

37

Lastpage

38

Abstract

A thermodynamic designed energy model for semiconductor devices is discussed. A system of evolution equations based on an expression for the density of the free energy is derived. First principles such as entropy maximum principle and the principle of partial local equilibrium are applied. The free energy is assumed as the sum of the internal free energy and the electrostatic field energy. A 1.55 μm RW MQW laser is used in the simulations.

Keywords

electric fields; free energy; maximum entropy methods; quantum well lasers; ridge waveguides; semiconductor device models; temperature distribution; thermo-optical effects; waveguide lasers; 1.55 mum; RW MQW laser; electrostatic field energy; energy model; entropy maximum principle; free energy; partial local equilibrium principle; semiconductor devices; Cause effect analysis; Differential equations; Laser modes; Optical devices; Quantum well lasers; Semiconductor devices; Semiconductor lasers; Stochastic processes; Temperature distribution; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259039

Filename

1259039