Title :
Vertical beam quality of 660 nm AlGaInP laser diodes with asymmetric cladding layer
Author :
Yoshida, Yasuaki ; Nishiguchi, Harumi ; Sasaki, Motoko ; Abe, Sinji ; Ohno, Akihito ; Miyashita, Makoto ; Ono, Ken-ichi ; Yagi, Tetsuya ; Omura, Etuji
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Numerical analysis on the influence of the structural asymmetry on the vertical beam quality and optimization of laser characteristics are studied in the paper. Deflection of the vertical beam toward the GaAs substrate is caused by the disagreement of the steady-state optical field between the active region and the window region. The calculated angle of deflection is approximately 1.5 °, which agrees with the measurement.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; semiconductor device models; semiconductor lasers; 660 pm; AlGaInP; AlGaInP laser diodes; GaAs; active region; asymmetric cladding layer; deflection angle; laser characteristics optimization; steady-state optical field; vertical beam; window region; Diode lasers; Laser beams; Optical propagation; Optical refraction; Optical variables control; Optical waveguides; Power generation; Quantum well lasers; Steady-state; Waveguide lasers;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259040
