Title :
Balanced optimization of 1.31 μm tunnel-junction VCSELs
Author :
Piprek, Joachim ; Jayaraman, Vijay ; Mehta, Manish ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A hybrid approach that combines the advantages of GaAs mirrors and InP active layers in InP/GaAs wafer bonded 1.31 μm VCSELs is described. This novel device concept features intra-cavity ring contacts, five strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction in order to reduce absorption by p-doped layers. The tunnel junction is literally confined forming an aperture for current injection and wave guiding. A self-consistent VCSEL simulation software is employed in order to analyze and optimize the internal device physics.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; laser mirrors; quantum well lasers; semiconductor device models; semiconductor quantum wells; surface emitting lasers; 1.31 mum; AlGaInAs; AlInAs-InP; AlInAs/InP tunnel junction; GaAs mirrors; InP active layers; InP-GaAs; VCSEL simulation software; current injection; intracavity ring contacts; strain-compensated AlGaInAs quantum wells; tunnel-junction VCSELs; wave guiding; Absorption; Apertures; Gallium arsenide; Indium phosphide; Mirrors; Optical fiber communication; Optical fiber devices; Optical fiber testing; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259042
