Effects of electrode spacing on the response of optically controlled MESFETs

Author

AlSunaidi, M.A. ; Al-Absi, M.A.

Author_Institution

King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

51

Lastpage

52

Abstract

An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 μm. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.

Keywords

Schottky gate field effect transistors; electrodes; integrated optoelectronics; photoconductivity; phototransistors; semiconductor device models; time-domain analysis; 0.3 to 1.4 mum; Gaussian light pulse; MESFETs; drain-gate separation; electrode spacing; photocurrent; transport equation; waveform fall time; waveform rise time; Electrodes; Energy conversion; Equations; MESFETs; MOSFET circuits; Optical control; Optical coupling; Optical design; Optical pulses; Photoconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259045

Filename

1259045