Title :
Effects of electrode spacing on the response of optically controlled MESFETs
Author :
AlSunaidi, M.A. ; Al-Absi, M.A.
Author_Institution :
King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia
Abstract :
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 μm. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.
Keywords :
Schottky gate field effect transistors; electrodes; integrated optoelectronics; photoconductivity; phototransistors; semiconductor device models; time-domain analysis; 0.3 to 1.4 mum; Gaussian light pulse; MESFETs; drain-gate separation; electrode spacing; photocurrent; transport equation; waveform fall time; waveform rise time; Electrodes; Energy conversion; Equations; MESFETs; MOSFET circuits; Optical control; Optical coupling; Optical design; Optical pulses; Photoconductivity;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259045
