Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

Author

Nadir, Mohammed

Author_Institution

Tampere Univ. of Technol., Finland

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

53

Lastpage

54

Abstract

A multi-quantum-well laser Ga_xIn_1-xN_1-yAs_y/GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al_0.143Ga_0.857As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.

Keywords

III-V semiconductors; current distribution; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; laser mirrors; optical communication equipment; optical fibre communication; optical interconnections; quantum well lasers; semiconductor device models; surface emitting lasers; wide band gap semiconductors; Al_0.143Ga_0.857As; AlAs; GaInNAs-GaAs; GaInNAs-GaAs multi-quantum-wells; PICS3D[PICS3D]; VCSEL; current distribution; distributed Bragg reflector (DBR) mirrors; modelling software; optical gain effect; vertical-cavity surface-emitting lasers; Computational modeling; Fiber lasers; Laser modes; Laser theory; Optical fiber communication; Optical interconnections; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259046

Filename

1259046