FDTD simulation of the nonlinear gain dynamics and modulation response of a semiconductor microcavity

Author

Slavcheva, Gabriela M. ; Arnold, John M.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

82

Lastpage

83

Abstract

The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 μm long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (λ = 1.5 μm) is launched.

Keywords

III-V semiconductors; electro-optical modulation; finite difference time-domain analysis; gallium arsenide; laser transitions; microcavity lasers; quantum optics; semiconductor device models; semiconductor lasers; spatiotemporal phenomena; 1.5 mum; 15 mum; FDTD simulation; GaAs; atomic transition frequency; continuous-wave sinusoid source field; full-wave vectorial Maxwell-Bloch equations; modulation response; semiconductor microcavity; spatio-temporal dynamics; two-level quantum system; Finite difference methods; Frequency; Gallium arsenide; Maxwell equations; Microcavities; Nonlinear dynamical systems; Nonlinear equations; Slabs; Testing; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259057

Filename

1259057