Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications

Author

Seongjae Cho ; Hyungjin Kim ; Heesauk Jhon ; In Man Kang ; Byung-Gook Park ; Harris, James S.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

Volume

1

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

48

Lastpage

53

Abstract

In this paper, a nanowire germanium/gallium arsenide (Ge/GaAs) heterojunction-based tunneling field-effect transistor (TFET) is investigated, with an emphasis on the device-circuit interaction. It is applied to a common-source (CS) amplifier, one of the most fundamental analog circuit blocks, and its performance is evaluated with a device-circuit mixed-mode simulation. Furthermore, the passive elements are adjusted to obtain the proper operating point (Q-point) of the circuit, and high-frequency operations are evaluated on this basis. Moreover, from the simulation results, the transfer function is successfully modeled and verified, which shows that the CS amplifier with the heterojunction TFET works as a single-zero and two-pole system. The 3-dB roll-off and unity-gain frequencies are 320 GHz and 2 THz, respectively, which is evidence for circuit applications in the extremely high-frequency regime.

Keywords

III-V semiconductors; analogue integrated circuits; elemental semiconductors; gallium arsenide; germanium; high electron mobility transistors; mixed analogue-digital integrated circuits; nanowires; submillimetre wave amplifiers; submillimetre wave transistors; Ge-GaAs; Ge-GaAs heterojunction tunneling field-effect transistor; Q-point; TFET; analog circuit blocks; circuit applications; common-source amplifier; device-circuit interaction; frequency 2 THz; frequency 320 GHz; mixed-mode simulation; nanowire germanium-gallium arsenide; passive elements; single-zero system; transfer function; two-pole system; Heterojunction; analog circuit; device-circuit interaction; high-frequency; mixed-mode simulation; transfer function; tunneling field-effect transistor (TFET);

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2013.2256458

Filename

6492093